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| www..com LD01N60 POWER FIELD EFFECT TRANSISTOR FEATURES Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION SYMBOL TO-220/TO-220FP Top View D GATE SOURCE DRAIN 3 1 2 1 2 G TO-220 1 2 3 TO-220FP S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed Gate-to-Source Voltage Continue Non-repetitive Total Power Dissipation TO-251/252 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy TJ = 25 (VDD = 100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25) Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds JC JA TL 1.0 62.5 260 /W TJ, TSTG EAS Symbol ID IDM VGS VGSM PD 50 -55 to 150 20 mJ Value 1.0 9.0 30 40 V V W Unit A WANLIDA ELECTRONICS CO.,LTD SHENZHEN http://www.wldic.com Page 1 www..com LD01N60 POWER FIELD EFFECT TRANSISTOR ORDERING INFORMATION Part Number LD01N60N251 LD01N60N252 LD01N60N92 LD01N60GN251* LD01N60GN252* LD01N60GN92* *Note: G : Suffix for Pb Free Product Package TO-251 TO-252 TO-92 TO-251 TO-252 TO-92 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25. LD01N60 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 0.6A) * Forward Transconductance (VDS 50 V, ID = 0.5A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25" from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time ** Negligible, Dominated by circuit inductance (IS = 1.0 A, VGS = 0 V, dIS/dt = 100A/s) VSD ton trr ** 350 500 1.5 V ns ns LS 7.5 nH (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 300 V, ID = 1.0 A, VGS = 10 V, RG = 18) * (VDS = 400 V, ID = 1.0 A, VGS = 10 V)* IDSS 0.1 0.3 IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD 0.5 210 28 4.2 8 21 18 24 8.5 1.8 4 4.5 14 2.0 100 100 4.0 10.5 nA nA V mhos pF pF pF ns ns ns ns nC nC nC nH mA Symbol V(BR)DSS Min 600 Typ Max Units V * Pulse Test: Pulse Width 300s, Duty Cycle 2% WANLIDA ELECTRONICS CO.,LTD SHENZHEN http://www.wldic.com Page 2 www..com LD01N60 POWER FIELD EFFECT TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS WANLIDA ELECTRONICS CO.,LTD SHENZHEN http://www.wldic.com Page 3 www..com LD01N60 POWER FIELD EFFECT TRANSISTOR WANLIDA ELECTRONICS CO.,LTD SHENZHEN http://www.wldic.com Page 4 |
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